Detection of vacancy-like defects during Cu diffusion in GaAs by positron annihilation
نویسندگان
چکیده
منابع مشابه
Positron annihilation studies on vacancy defects in group IV semiconductors
Electrical properties of semiconductor materials are greatly influenced by point defects such as vacancies and interstitials. These defects are common and form during the growth and processing of the material. Positron annihilation spectroscopy is a method suitable for detecting and studying vacancy-type lattice defects. In this work, the formation, properties, and annealing of vacancy defects ...
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Positron annihilation spectroscopy was applied to study relaxed P-doped n-type and undoped Si1−xGex layers with x up to 0.30. The as-grown SiGe layers were found to be defect free and annihilation parameters in a random SiGe alloy could be represented as superpositions of annihilations in bulk Si and Ge. A 2 MeV proton irradiation with a 1.6 1015 cm−2 fluence was used to produce saturated posit...
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Energetic positrons propagating along low index directions in a crystal interact strongly with the periodic array of atoms via a process known as channeling. The trajectories of such channeled positrons can be manipulated to sample dierent spatial regions in the crystal. Here we report the ®rst observations of channeling eects on in̄ight annihilation radiation from positrons traversing a thin ...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2011
ISSN: 1742-6596
DOI: 10.1088/1742-6596/265/1/012005